advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 40v good thermal performance r ds(on) 36m fast switching performance i d 11.7a rohs compliant p-ch bv dss -40v r ds(on) 72m description i d -8.7a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 40 -40 v v gs gate-source voltage 16 20 v i d @t c =25 continuous drain current 3 11.7 -8.7 a i d @t c =100 continuous drain current 3 7.4 -5.5 a i dm pulsed drain current 1 50 -40 a p d @t c =25 total power dissipation 9 w linear derating factor 0.07 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-c thermal resistance junction-case 3 max. 14 /w rthj-a thermal resistance junction-ambient 3 max. 110 /w data and specifications subject to change without notice parameter 200628062-1/7 thermal data AP4521GEH pb free plating product the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. s1 to-252-4l g1 s2 g2 d1/d2 s1 g1 d1 s2 g2 d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.03 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - - 36 m v gs =4.5v, i d =6a - - 42 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =10v, i d =8a - 8 - s i dss drain-source leakage current (t j =25 o c) v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =32v, v gs =0v - - 25 ua i gss gate-source leakage v gs =16v - - 30 ua q g total gate charge 2 i d =8a - 7.4 12 nc q gs gate-source charge v ds =30v - 1.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.5 - nc t d(on) turn-on delay time 2 v ds =20v - 5.3 - ns t r rise time i d =8a - 19.3 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 18 - ns t f fall time r d =2.5 -3- ns c iss input capacitance v gs =0v - 590 940 pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 50 - pf r g gate resistance f=1.0mhz - 1.8 2.7 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =8a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =8a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 13 - nc 2/7 AP4521GEH
p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : ,i d =-1ma - -0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 72 m v gs =-4.5v, i d =-4a - - 92 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -2.5 v g fs forward transconductance v ds =-10v, i d =-6a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =-40v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =-6a - 7.3 12 nc q gs gate-source charge v ds =-30v - 1.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.6 - nc t d(on) turn-on delay time 2 v ds =-20v - 6 - ns t r rise time i d =-6a - 17 - ns t d(off) turn-off delay time r g =1 ,v gs =-10v - 21 - ns t f fall time r d =3.33 -5- ns c iss input capacitance v gs =0v - 450 720 pf c oss output capacitance v ds =-25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 5.6 8.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-6a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-6a, v gs =0v - 22 - ns q rr reverse recovery charge di/dt=-100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.n-ch , p-ch are same . 3/7 AP4521GEH
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 4/7 AP4521GEH 0 10 20 30 40 50 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 10 20 30 40 0246 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 20 30 40 50 60 70 80 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =6a t c =25 o c 0.6 0.9 1.2 1.5 1.8 2.1 2.4 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 20.0 30.0 40.0 50.0 60.0 0 10203040 i d , drain current (a) r ds(on) (m ?
n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 5/7 AP4521GEH q v g 4.5v q gs q gd q g charge 0 4 8 12 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =8a v ds =30v 10 100 1000 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 40 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 6/7 AP4521GEH 0 10 20 30 40 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 40 80 120 160 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-4a t c =25 o c 0 5 10 15 20 25 30 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g =-10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 40.0 50.0 60.0 70.0 80.0 90.0 100.0 110.0 120.0 0 5 10 15 20 -i d , drain current (a) r ds(on) (m ?
AP4521GEH p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 7/7 0 2 4 6 8 10 12 0 5 10 15 20 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-6a v ds =-30v 10 100 1000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v q v g -4.5v q gs q gd q g charge
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